Tsinghua Unigroup has recently broken ground for a memory plant in Nanjing which will be engaged in the manufacture of 3D NAND flash and DRAM chips, according media reports from China.
Construction of Tsinghua Unigroup’s Nanjing plant covering an area of about 100 hectares will take place in two phases, with total investment estimated at around US$30 billion, according to the reports. The construction is expected to complete by 2019.
The phase one of the plant will bring in monthly production capacity of 100,000 wafers with the output to have estimated annual revenues of US$4.8 billion, while the phase two of the facility will have 200,000 wafers in monthly capacity and an estimated US$10 billion in annual revenues, according to Tsinghua Unigroup.
Tsinghua Unigroup recently struck a deal with the China Development Bank (CDB), under which the bank will provide Tsinghua Unigroup with CNY100 billion (US$14.5 billion) of financing support through to 2020. Tsinghua Unigroup also reached a separate agreement with Sino IC Capital, which was set up in 2014 to oversee China’s National Semiconductor Industry Investment Fund (known as the Big Fund), under which Sino IC Capital will inject up to CNY50 billion into Tsinghua unigroup.
Earlier in 2017, Tsinghua Unigroup disclosed plans to establish IC manufacturing sites in Wuhan, Chengdu and Nanjing with total investment reaching US$70 billion. The company has unveiled its fab projects in Wuhan and Nanjing.